Acerca de la medición de resistencia térmica de un misistor de potencia.

Nikolay Bespalov; Aleksey Lysenkov.

Nikolay Bespalov Department of electronics and nanoelectronics, Ogarev Mordovia State University, Saransk, Mordovia, Russian Federation.
Aleksey Lysenkov. Department of electronics and nanoelectronics, Ogarev Mordovia State University, Saransk, Mordovia, Russian Federation.

Palabras clave: transistor MIS de potencia, método de medición, resistencia térmica, caja de transición, parámetros sensibles a la temperatura

Resumen

El artículo considera el método de determinación de resistencia térmica para un caso de transición de transistores MIS con un canal inducido. Se propone utilizar el voltaje de la fuente de drenaje como un parámetro sensible a la temperatura. Se describe el proceso de calibración de dependencia de la temperatura del parámetro. Se presenta el histograma de distribución de valores de resistencia térmica para transistores MIS de potencia.

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