Design of integrated optical Receiver DC-20 GHz based on SiGe BiCMOS technology.
Abstract
The integrated receiver design with DC-20 GHz bandwidth based on 0.25 μm SiGe BiCMOS technology is described. The following results were obtained: the gain up to 20 GHz is approximately 22-2 5dB, the transimpedance gain is 61-65 dBΩ within the bandwidth, and the current consumption is 60 mA. The output power at 20 GHz is -4.5 dBm, the rmsoutput amplitude is 0.3 V with a load of 50 Ohms, current noise referred to the input in = 15.6 pA / √Hz, the group delay for the receiver optical is 30 ± 2 ps. The device can be used in broadband telecommunications systems, microwave signal transmission lines within large objects, phased array antennas and much more.
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