Diseño del receptor óptico integrado dc-20 ghz basado en la tecnología sige bicmos.
Resumen
Se describe el diseño de receptor integrado con ancho de banda de DC-20 GHz basado en la tecnología SiGe BiCMOS de 0.25 µm. Se obtuvieron como resultados: la ganancia hasta 20 GHz es aproximadamente 22-2 5dB, la ganancia de transimpedancia es 61-65 dBΩ dentro del ancho de banda, y el consumo actual es de 60 mA. La potencia de salida a 20 GHz es -4.5 dBm, la amplitud rms de salida es de 0.3 V con una carga de 50 Ohmios, ruido de corriente referido a la entrada in = 15.6 pA / √Hz, el retardo de grupo para el receptor óptico es de 30 ± 2 ps. El dispositivo puede utilizarse en sistemas de telecomunicaciones de banda ancha, líneas de transmisión de señales de microondas dentro de objetos grandes, antenas de matriz en fase y mucho más.
Citas
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